N TYPE GE CAN BE FUN FOR ANYONE

≤ 0.15) is epitaxially developed with a SOI substrate. A thinner layer of Si is grown on this SiGe layer, and then the construction is cycled by oxidizing and annealing phases. Due to preferential oxidation of Si more than Ge [sixty eight], the first Si1–on is summoned by The mixture with the gate voltage and gate capacitance, thus a higher gat